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IHS_EWBIEEE xploreSTRATEGY ANALYTICSIHS_EWB_GF

Next-Generation Power Semiconductors: Markets, Materials, Technologies

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出版日期:2014/12/02

Chapter 1    Introduction                                                                   1-1

 

1.1     Manufacturing Processes Are Differentiation Factors                1-3

1.2     Vertical Structure Devices Differ From Usual MOS

          Planar Structure                                                                       1-8

1.3     Super Junction Processes                                                          1-12

                  

Chapter 2    Applications of Power Semiconductors                           2-1

                  

2.1     Power Semiconductors in Renewable Energy                             2-3

          2.1.1  Solar                                                                               2-3

          2.1.2  Wind                                                                              2-12

2.2     Power Semiconductors in Hybrid & Electric Vehicles                 2-18

          2.2.1  Automotive Megatrends                                                  2-18

          2.2.2  Wide Bandgap Devices for HEVs/EVs                              2-30

2.3     Power Semiconductors in LED Lighting                                    2-38

2.4     Power Semiconductors in Industrial Motor Drives                      2-52

2.5     Power Semiconductors in Smart Home Market                          2-59

2.6     GaN and SiC Market Forecast For End Applications                   2-65

                  

Chapter 3    Market Analysis                                                             3-1

                  

3.1     Position of Power Semiconductors in Semiconductor Market     3-9

3.2     Growth Potential of IGBTs and Power MOSFETs                     3-11

3.3     End Application Markets                                                          3-22

3.4     Wide Bandgap Power Semiconductor Market                             3-28

                  

Chapter 4    Next-Generation Power Semiconductors                       4-1

                  

4.1     Expectations for Overcoming Silicon's Limitations                    4-1

4.2     Expectations Of SiC and GaN as Next-Generation Substrates     4-3

4.3     Benefits of Wide Band Gap Semiconductors                             4-3

4.4     SiC versus GaN                                                                        4-5

          4.4.1  Material Properties                                                          4-6

          4.4.2  Material Quality                                                              4-8

          4.4.3  SiC Lateral Devices:                                                        4-10

          4.4.4  SiC Vertical Devices                                                        4-10

          4.4.5  GaN Lateral Devices                                                        4-12

4.5     Fabrication of SiC devices                                                         4-22

          4.5.1 Bulk and Epitaxial Growth of SiC                                    4-22

          4.5.1.1  Bulk Growth                                                               4-22

          4.5.1.2  Epitaxial Growth                                                         4-23

          4.5.1.3  Defects                                                                       4-23

          4.5.2 Surface Preparation                                                         4-24

          4.5.3 Etching                                                                           4-26

          4.5.4 Lithography                                                                    4-26

          4.5.5 Ion Implantation                                                             4-27

          4.5.6 Surface Passivation                                                         4-28

          4.5.7 Metallization                                                                   4-30

4.6     Fabrication of GaN devices                                                        4-32

          4.6.1  GaN Challenges                                                              4-36

          4.6.1.1  Costs                                                                          4-36

          4.6.1.2  Reliability                                                                   4-39

          4.6.1.3  Component Packaging and Thermal Reliability            4-40

          4.6.1.4  Control                                                                       4-40

          4.6.1.5  Device Modeling                                                         4-41

4.7     Packaging                                                                                4-41

                  

Chapter 5    Company Profiles                                                           5-1

                  

5.1     Power Semiconductor Companies                                              5-1

          5.1.1  Infineon                                                                          5-1

          5.1.2  Mitsubishi                                                                      5-3

          5.1.3  Toshiba                                                                           5-5

          5.1.4  STMicroelectronics                                                         5-7

          5.1.5  Vishay                                                                            5-8

          5.1.6  International Rectifier                                                     5-11

          5.1.7  Fairchild                                                                         5-13

          5.1.8  Fuji Electric                                                                    5-16

          5.1.9  Renesas                                                                          5-17

          5.1.10 Semikron                                                                        5-19

          5.1.11 NXP Semiconductors                                                      5-20

5.2     SiC Wafer-Related Companies                                                   5-22

5.3     GaN Wafer-Related Companies                                                 5-22

5.4     Profiles of Companies with Next-Generation Activities              5-23

          5.4.1  Mitsubishi Electric                                                          5-23

          5.4.2  Fuji Electric Holdings                                                      5-24

          5.4.3  Toshiba                                                                           5-25

          5.4.4  Rohm                                                                             5-26

          5.4.5  Sanken Electric                                                               5-28

          5.4.6  Shindengen Electric                                                        5-29

          5.4.7  Infineon                                                                          5-31

          5.4.8  Microsemi                                                                       5-32

          5.4.9  Cree                                                                                5-33

          5.4.10 GeneSiC Semiconductor                                                 5-34

          5.4.11 Semisouth Laboratories                                                   5-35

          5.4.12 United Silicon Carbide                                                    5-36

          5.4.13 MicroGaN                                                                       5-37

          5.4.14 Powerex                                                                          5-38

          5.4.15 Fairchild                                                                         5-38

          5.4.16 International Rectifier                                                     5-39

          5.4.17 Nitronix                                                                          5-39

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LIST OF FIGURES

 

1.1     Evolution Of IGBT Chip Structure                                            1-4

1.2     Effects Of Miniaturization Of IGBT Chip                                  1-6

1.3     SiC Trench-Type MOSFET And Resistance Reduction

          As Compared With DMOSFET                                                 1-7

1.4     Planar And Vertical (Trench) MOSFET                                     1-9

1.5     Schematic Of A FinFET                                                            1-11

1.6     Schematic Of A MOSFET And Super Junction MOSFET           1-13

1.7     Process Flow For Super Junction MOSFET                                1-14

2.1     Forecast Of Solar Power                                                            2-4

2.2     Full Bridge IGBT Topology                                                       2-5

2.3     PV Inverter Market Distribution                                                2-8

2.4     Block Diagram Of Microcontroller-Based Inverter                      2-11

2.5     Worldwide Wind Turbine Shipments                                         2-14

2.6     Top Wind Power Capacity by Country                                       2-15

2.7     Bill Of Materials For A Typical 30-50kw Inverter                       2-10

2.8     A Simple Diagram Of A HEV Traction Drive System.                2-22

2.9     A More Complex Diagram Of PEEM In A Plug-In

          Hybrid Electric Vehicle (PHEV)                                                2-23

2.10   Conducting And Switching Loses For Inverter                           2-25

2.11   Unit Pricing Trends In Power Semiconductors                           2-27

2.12   System And Component Costs For Wide Bandgap

          Semiconductors                                                                        2-31

2.13   Vertical And Lateral HEMY                                                      2-33

2.14   GaN Lateral And GaN Vertical HEMTs In EVs                          2-37

2.15   Market Drivers For LED Biz And Applications                          2-40

2.16   SSL Vs. Classical Technologies                                                 2-41

2.17   LED Performance Vs. Traditional Light Sources                        2-42

2.18   Energy Production And Use Comparison                                   2-45

2.19   Typical LED Drive Circuit                                                        2-48

2.20   Integration Of LED And LED Driver Using TSV                       2-51

2.21   Simple Power MOSFET Motor Controller                                  2-56

2.22   Basic Operating Principle Of Inverter                                        2-62

2.23   System Block Diagram Of An Air Conditioner                           2-64

 

3.1     Mitsubishi’s IGBT (Insulated Gate Bipolar Transistor)

          Generations                                                                              3-3

3.2     Infineon’s MOSFET Generations                                              3-4

3.3     Intel’s FinFET Design                                                               3-5

3.4     Fuji’s MOSFET versus Super Junction MOSFET                       3-6

3.5     NEC's GaN-on-Si Power Transistor                                           3-7

3.6     Fujitsu’s GaN-on-SiC HEMT Transistor                                    3-8

3.7     Power Semiconductor Market Forecast                                      3-10

3.8     Power Transistor Market Shares                                                3-12

3.9     Power Diode Market Shares                                                       3-13

3.10   Worldwide IGBT Market Share                                                 3-14

3.11   Market Shares For Super Junction MOSFET                              3-20

3.12   SJ MOSFETs as an Interim Solution                                         3-21

3.13   Power Transistor Market Share By Application                          3-23

3.14   Power Discrete Market For Renewable Energy                           3-24

3.15   Power Discrete Market Hybrid For and Electric

          Vehicles                                                                                   3-25

3.16   Power Discrete Market For General LED Lighting                     3-26

3.17   Power Discrete Market For Industrial Motor Control                  3-27

3.18   Forecast of Widebandgap Semiconductor Market                       3-29

4.1     Silicon-Based Devices Reaching Maturity                                  4-2

4.2     Enhancement Mode GaN On Si Transistor                                4-14

4.3     AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT                     4-18

4.4     GaN HEMT Material Structure On Si Substrate                         4-34

4.5     Power Package Integration Roadmap                                         4-43

 

 

 

 

 

 

 

 

 

 

 

LIST OF TABLES

 

2.1     Product Families And The Principal End Uses Of

          Power Products                                                                         2-2

2.2     Advantages And Disadvantages Of GaN Lateral HEMTs           2-36

2.3     Light Source Comparison                                                          2-45

2.4  Forecast Of GaN And SiC Power Devices By End Applications  2-73

3.1     Market Shares For Japanese Companies 2001-2012                    3-17

4.1     Physical Properties Of Select Semiconductor Materials               4-4

4.2     Wide Bandgap Material Properties                                             4-7

4.3     Lattice Constant And CTE Of Semiconductor Starting Material 4-11

4.4     GaN FET Vs Si MOSFET Characteristics                                   4-16

4.5     Standard Chemical Solution For Surface Preparation Of

          SiC Substrates                                                                          4-25

4.6     Interface Trap Densities For 4H-SiC Under Different

          Process Conditions.                                                                   4-29

 

 

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