Global RF GaN Market Research Report Forecast to 2023

GaN transistors are increasingly finding application in radio frequency application as they offer optimum solutions for simultaneous high power, high frequency, and high-temperature operation. GaN RF devices are primarily used for enabling wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. The factors driving the growth of the global RF GaN market include increasing adoption of energy & power applications and increased demand for it & telecommunication equipment. Currently, gallium nitride (GaN) has been extensively used in radio frequency (RF) and microwave applications to enhance the performance of various devices. GaN is nearly 10% more efficient than laterally diffused MOSFET (LDMOS) which helps in significant energy savings at power level 600W or more. Furthermore, GaN materials are highly efficient, which allows them to offer superior system reliability. GaN-on-Si devices are used in solid-state RF energy systems as they offer an ideal balance of performance, reliability, and power efficiency with an affordable cost structure at production levels. However, competition from silicon carbide (SiC) devices is a restraint to market players.
In 2017, North America dominated the global market; the regional market was valued at USD 164.6 million and is expected to register a CAGR of 22.0% during the forecast period. However, the market in Asia-Pacific is expected to be the fastest-growing at the highest CAGR of 22.8% during the review period.
The global RF GaN market has been segmented on the basis of material type, application, and region. By material type, the market is segmented into GaN-on-SiC, GaN-on-Silicon and GaN-on-Diamond. Based on application, the market is segmented into IT & telecommunication, military & defense, aerospace, and others.

Based on material type, the GaN-On-SiC segment was the largest at a market value of 246.2 million in 2017; it is projected to register a CAGR of 22.1% during the forecast period. By application, the IT & telecommunication segment accounted for the highest market value of 165.2 million in 2017; the segment is projected to exhibit a CAGR of 23.8% during the review period.
Key Players
The key players in the global RF GaN market are NXP Semiconductors N.V. (Netherlands), Analog Devices Inc. (US), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Semiconductors (Japan), Cree Inc. (US), Aethercomm Inc. (US), Microchip Technology Incorporated (US), Raytheon Company (US), and Qorvo Inc. (US).
Global RF GaN Market Analysis & Forecast, from 2017 to 2023
‧ To provide a detailed analysis of the market structure along with a forecast of the various segments and sub-segments of the global RF GaN market
‧ To provide insights into factors affecting market growth
‧ To analyze the global RF GaN market based on Porter's Five Forces analysis
‧ To provide historical and forecast revenue of the market segments and sub-segments with respect to four main geographies and their countries—North America, Europe, Asia, and the rest of the world
‧ To provide country-level analysis of the market with respect to the current market size and future prospects
‧ To provide country-level analysis of the market for segments on the basis of material type, application and region
‧ To provide strategic profiling of key players in the market, comprehensively analyzing their core competencies, and drawing a competitive landscape for the market
‧ To track and analyze competitive developments such as joint ventures, strategic alliances, mergers & acquisitions, product developments, and research and developments in the global RF GaN market
Target Audience
‧ Technology Providers
‧ Research organizations
‧ Technology investors
‧ Venture capitalists
‧ Government organizations

Key Findings
‧ The global RF GaN market is expected to reach USD 1295.5 million by 2023.
‧ Based on material type, the GaN-On-SiC segment accounted for the largest market share with a value of USD 246.2 million in 2017 and is projected to register a CAGR of 22.1% during the forecast period.
‧ On the basis of application, the IT & telecommunication segment was the largest market valued at USD 165.2 million in 2017 and is projected to exhibit a CAGR of 23.8% during the forecast period.
‧ North America is projected to be the largest regional market.
Regional and Country-Level Analysis of the Global RF GaN Market, Estimation and Forecast
North America is expected to lead the global RF GaN market with a CAGR of 22.0% during the forecast period. Europe is projected to be the second-largest market exhibiting a CAGR of 21.0%. The market in the Asia-Pacific is the highest growing market at a 22.8% CAGR. The market in the rest of the world is projected to register a CAGR of 19.7% during the forecast period.
The report on the global RF GaN market also covers the following country-level analysis:
‧ North America
o US
o Canada
o Mexico
‧ Europe
o UK
o Germany
o France
o Rest of Europe
‧ Asia-Pacific
o China
o India
o Japan
o Rest of Asia-Pacific
‧ Rest of the world

Table of Contents:

1 Executive Summary
1.1 Market Attractiveness Analysis
1.1.1 Global RF GaN Market, by Material Type
1.1.2 Global RF GaN Market, by Application
1.1.3 Global RF GaN Market, by Region
2 Market Introduction
2.1 Definition
2.2 Scope of the Study
2.3 Market Structure
3 Research Methodology
3.1 Research Process
3.2 Primary Research
3.3 Secondary Research
3.4 Market Size Estimation
3.5 Forecast Model
3.6 List of Assumptions
4 Market Insights
5 Market Dynamics
5.1 Introduction
5.2 Drivers
5.2.1 Increasing Adoption of Energy & Power Applications
5.2.2 Increased Demand for IT & Telecommunication Equipment
5.3 Restraint
5.3.1 Competition from Silicon Carbide (SiC) Devices
5.4 Opportunity
5.4.1 Innovation in Linearization and Power Efficiency of RF Power Amplifiers
5.5 Technological Trend
6 Market Factor Analysis
6.1 Supply/Value Chain Analysis
6.1.1 Material Suppliers
6.1.2 Original Equipment Manufacturer (OEMs)
6.1.3 Distributor and Retailer
6.1.4 End User
6.2 Porter’s Five Forces Model
6.2.1 Threat of New Entrants
6.2.2 Bargaining Power of Suppliers
6.2.3 Bargaining Power of Buyers
6.2.4 Threat of Substitutes
6.2.5 Intensity of Rivalry
7 Global RF GaN Market, by Material Type
7.1 Overview
7.2 GaN-On-SiC
7.2.1 GaN-On-SiC: Market Estimates & Forecast, by Region, 2018–2023
7.3 GaN-On-Silicon
7.3.1 GaN-On- Silicon: Market Estimates & Forecast, by Region, 2018–2023
7.4 GaN-On-Diamond
7.4.1 GaN-On-Diamond: Market Estimates & Forecast, by Region, 2017—2023
8 Global RF GaN Market, by Application
8.1 Overview
8.2 IT & Telecomm
8.2.1 IT & Telecomm: Market Estimates & Forecast, by Region, 2018–2023
8.3 Aerospace
8.3.1 Aerospace: Market Estimates & Forecast, by Region, 2018–2023
8.4 Military & Defense
8.4.1 Military & Defense: Market Estimates & Forecast, by Region, 2018–2023
9 Global RF GaN Market, by Region
9.1 Overview
9.2 North America
9.2.1 North America RF GaN Market, by Material Type, 2017—2023
9.2.2 North America RF GaN Market, by Application, 2017—2023
9.2.3 North America RF GaN Market, by Country
9.2.3.1 US
9.2.3.1.1 US RF GaN Market, by Material Type, 2017—2023
9.2.3.1.2 US RF GaN Market, by Application, 2017—2023
9.2.3.2 Canada
9.2.3.2.1 Canada RF GaN Market, by Material Type, 2017—2023
9.2.3.2.2 Canada RF GaN Market, by Application, 2017—2023
9.2.3.3 Mexico
9.2.3.3.1 Mexico RF GaN Market, by Material Type, 2017—2023
9.2.3.3.2 Mexico RF GaN Market, by Application, 2017—2023
9.3 Europe
9.3.1 Europe RF GaN Market, by Material Type, 2017—2023
9.3.2 Europe RF GaN Market, by Application, 2017—2023
9.3.3 Europe RF GaN Market, by Country
9.3.3.1 Germany
9.3.3.1.1 Germany RF GaN Market, by Material Type, 2017—2023
9.3.3.1.2 Germany RF GaN Market, by Application, 2017—2023
9.3.3.2 UK
9.3.3.2.1 UK RF GaN Market, by Material Type, 2017—2023
9.3.3.2.2 UK RF GaN Market, by Application, 2017—2023
9.3.3.3 France
9.3.3.3.1 France RF GaN Market, by Material Type, 2017—2023
9.3.3.3.2 France RF GaN Market, by Application, 2017—2023
9.3.3.4 Rest of Europe
9.3.3.4.1 Rest of Europe RF GaN Market, by Material Type, 2017—2023
9.3.3.4.2 Rest of Europe RF GaN Market, by Application, 2017—2023
9.4 Asia-Pacific
9.4.1 Asia-Pacific RF GaN Market, by Material Type, 2017—2023
9.4.2 Asia-Pacific RF GaN Market, by Application, 2017—2023
9.4.3 Asia-Pacific RF GaN Market, by Country
9.4.3.1 Japan
9.4.3.1.1 Japan RF GaN Market, by Material Type, 2017—2023
9.4.3.1.2 Japan RF GaN Market, by Application, 2017—2023
9.4.3.2 China
9.4.3.2.1 China RF GaN Market, by Material Type, 2017—2023
9.4.3.2.2 China RF GaN Market, by Application, 2017—2023
9.4.3.3 India
9.4.3.3.1 India RF GaN Market, by Material Type, 2017—2023
9.4.3.3.2 India RF GaN Market, by Application, 2017—2023
9.4.3.4 Rest of Asia-Pacific
9.4.3.4.1 Rest of Asia-Pacific RF GaN Market, by Material Type, 2017—2023
9.4.3.4.2 Rest of Asia-Pacific RF GaN Market, by Application, 2017—2023
9.5 Rest of the World
9.5.1 Rest of the World RF GaN Market, by Material Type, 2017—2023
9.5.2 Rest of the World RF GaN Market, by Application, 2017—2023
9.5.3 Rest of the World RF GaN Market, by Country
9.5.3.1 Middle East & Africa
9.5.3.1.1 Middle East RF GaN Market, by Material Type, 2017—2023
9.5.3.1.2 Middle East RF GaN Market, by Application, 2017—2023
9.5.3.2 South America
9.5.3.2.1 South America RF GaN Market, by Material Type, 2017—2023
9.5.3.2.2 South America RF GaN Market, by Application, 2017—2023
10 Competitive Landscape
10.1 Competitive Overview
10.2 Competitor Dashboard
10.3 Competitive Benchmarking
10.4 NXP Semiconductors: The Leading Player in terms of Number of Developments in Global RF GaN Market
10.5 Key Developments & Growth Strategies
10.5.1 New Product Launch/Service Deployment
10.5.2 Merger & Acquisition
10.5.3 Collaboration/Contracts
10 Company Profiles
10.1 NXP Semiconductors NV
10.1.1 Company Overview
10.1.2 Financial Overview
10.1.3 Product/Service/Solutions Offered
10.1.4 Key Developments
10.1.5 SWOT Analysis
10.1.6 Key Strategies
10.2 Analog Devices Inc.
10.2.1 Company Overview
10.2.2 Financial Overview
10.2.3 Product/Service/Solutions Offered
10.2.4 Key Developments
10.2.5 SWOT Analysis
10.2.6 Key Strategies
10.3 STMicroelectronics NV
10.3.1 Company Overview
10.3.2 Financial Overview
10.3.3 Product/Service/Solutions Offered
10.3.4 Key Developments
10.3.5 SWOT Analysis
10.3.6 Key Strategies
10.4 Toshiba Corporation
10.4.1 Company Overview
10.4.2 Financial Overview
10.4.3 Product/Service/Solutions Offered
10.4.4 Key Developments
10.4.5 SWOT Analysis
10.4.6 Key Strategies
10.5 ROHM Semiconductors
10.5.1 Company Overview
10.5.2 Financial Overview
10.5.3 Product/Service/Solutions Offered
10.5.4 Key Developments
10.5.5 SWOT Analysis
10.5.6 Key Strategies
10.6 Cree Inc
10.6.1 Company Overview
10.6.2 Financial Overview
10.6.3 Product/Service/Solutions Offered
10.6.4 Key Developments
10.6.5 SWOT Analysis
10.6.6 Key Strategies
10.7 Aethercomm Inc.
10.7.1 Company Overview
10.7.2 Product/Service/Solutions Offered
10.7.3 Key Developments
10.7.4 Key Strategies
10.8 Microchip Corporation
10.8.1 Company Overview
10.8.2 Financial Overview
10.8.3 Product/Service/Solutions Offered
10.8.4 Key Developments
10.8.5 SWOT Analysis
10.8.6 Key Strategies
10.9 Raytheon Company
10.9.1 Company Overview
10.9.2 Financial Overview
10.9.3 Product/Service/Solutions Offered
10.9.4 Key Developments
10.9.5 SWOT Analysis
10.9.6 Key Strategies
10.10 Qorvo Inc
10.10.1 Company Overview
10.10.2 Financial Overview
10.10.3 Product/Service/Solutions Offered
10.10.4 Key Developments
10.10.5 SWOT Analysis
10.10.6 Key Strategies