Compound Semiconductor Industry Review April - June 2012: Microelectronics

Most of the large microelectronics companies reported financial results during the period and there is no strong trend, lending weight to the premise that 2012 will not see much growth. The Japanese company results indicate there has been some stabilization in that region, but some companies have been slower to recover. In advance of a large industry trade show, development activities, especially in GaN continue to see strong growth.

1 Executive Summary
2 Introduction
3 MMICs
3.1 Company Results
3.1.1 Freescale Semiconductor Reports First Quarter 2012 Results
3.1.2 WIN Semiconductors Reports Q1 2012 Financial Results
3.1.3 RFMD Reports Q4 and FY 2012 Financials
3.1.4 Microsemi Reports Q2 FY 2012 Results
3.1.5 Teledyne Reports First Quarter Results
3.1.6 TriQuint Reports Q1 FY 2012 Results
3.1.7 Hittite Reports Q1 FY 2012 Financials
3.1.8 Skyworks Reports Q2 FY 2012 Financials
3.1.9 Fujitsu Reports FY 2011 Financials
3.1.10 Mitsubishi Reports FY 2012 Financials
3.1.11 ANADIGICS Reports Q1 FY 2012 Results
3.1.12 Toshiba Reports FY 2011 Financials
3.1.13 Agilent Reports Q2 2012 Financials
3.1.14 Sony Reports FY 2012 Financial Results
3.2 Contracts
3.2.1 NEC MEDIAS Smartphone Powered by ANADIGICS' HELP4 Power Amplifier
3.2.2 Comtech Receives $1.5 Million Award for High-Power Ka-band Amplifiers
3.2.3 ANADIGICS PAs Designed into ZTE Smartphones
3.2.4 ANADIGICS' HELP4 PAs Power Huawei Honor W-CDMA Smartphone
3.3 New Products
3.3.1 TriQuint Develops RF SAW Filters for 3G/4G Applications
3.3.2 RFMW Announces Design Support for TriQuint DVGA Solutions
3.3.3 Nitronex Develops 40W GaN Transistor
3.3.4 Richardson RFPD Announces Availability of GaN-On-SiC Power Transistors
3.3.5 RFMD Develops InGaP HBT MMIC Amplifier
3.3.6 RFMD Introduces Narrowband MMIC VCOs with Integrated Dividers
3.3.7 TriQuint Announces Integrated DVGAs
3.3.8 Custom MMIC Introduces Ka-Band LNA MMIC
3.3.9 Mitsubishi Electric Develops 14 GHz PA with 100W Output
3.3.10 M/A-COM Tech Expands Digital Phase Shifter Family
3.3.11 Hittite Expands High Current Active Bias Controller Portfolio
3.3.12 RFMD Teams With Silicon Labs for Smart Energy Applications
3.3.13 RFMD Expands I/Q Converter Product Family
3.3.14 Hittite Develops Dual Channel Downconverter RFIC
3.3.15 Millitech Offers GaN-based Power Amplifiers
3.3.16 Hittite Introduces Optical Modulator Driver
3.3.17 M/A-COM Tech Develops 120W SPDT Switch
3.3.18 RFMD Introduces High Power Front End Module
3.3.19 RFMD Releases Symmetric SP3T
3.3.20 Hittite Releases Programmable Harmonic Low Pass Filter
3.3.21 M/A-COM Tech Introduces 1W Linear RF Driver Amplifier
3.3.22 GigOptix Samples 26.5 GHz Distributed PA MMIC
3.3.23 Hittite Introduces Filter Chip with Selectable Passband Frequency
3.3.24 M/A-COM Tech Introduces 6-Bit Serial/Parallel Module Driver
3.3.25 Cree Releases X-Band GaN HEMT Power Transistors
3.3.26 Hittite Expands Clock Divider & Delay Management IC Products
3.3.27 RFMD Develops 9W Wideband GaN PA
3.3.28 TriQuint Announces CATV / FTTH Solutions
3.3.29 RFMD Develops GaAs HBT PA MMIC
3.3.30 Cree Releases S-Band GaN Device for Radar Applications
3.3.31 Freescale Introduces GaN Product for Cellular Infrastructure Applications
3.3.32 StratEdge Launches High-Power Laminate Packages
3.3.33 Cree Updates Process Design Kit for GaN-on-SiC HEMT Devices
3.3.34 ANADIGICS Expands Small-Cell Wireless Infrastructure PA Portfolio
3.3.35 RFMD Updates Design Kits for ADS 2011 Software
3.3.36 Hittite Introduces Millimeter Wave PAs
3.3.37 TriQuint Introduces 802.11ac Wi-Fi Solution for Mobile Devices
3.3.38 M/A-COM Tech Introduces 6-Bit Digital Phase Shifter
3.3.39 M/A-COM Tech Announces Edge QAM Variable Gain Amplifier
3.3.40 TriQuint Announces Discrete GaN Transistors and MMIC PAs
3.3.41 Skyworks Expands LNA Portfolio
3.3.42 TriQuint Expands Millimeter Wave PA Portfolio
3.3.43 Sumitomo Features GaN HEMTs for Satcom Applications
3.3.44 Sumitomo Displays GaN HEMTs for Radar Applications
3.3.45 Sumitomo Electric Showcases Radio Link MMIC Portfolio
3.3.46 Mitsubishi Electric Develops GaN-on-Si PA
3.3.47 Toshiba Announces Ka-Band High Power GaN MMIC
3.3.48 Toshiba Develops X-Band GaN Hybrid IC
3.3.49 Toshiba Expands GaAs FET Portfolio
3.3.50 TriQuint Introduces Wireless Infrastructure LNAs
3.3.51 Fujitsu Develops Single-Chip 10 GHz GaN HEMT Transceiver
3.3.52 TriQuint Releases 7-bit Digital Attenuator
3.3.53 Skyworks Develops Front-End Solution
3.3.54 Hittite Launches Power Amplifiers with On-Chip Power Detectors
3.4 Other
3.4.1 RFMD Announces Retirement of Co-Founder Jerry D. Neal
3.4.2 Northrop Grumman Completes 2000th Microwave Power Module
3.4.3 Raytheon Receives Gallium Nitride Award from DARPA
3.4.4 TriQuint Signs US Army Agreement to Support GaN Device Development
3.4.5 DARPA Awards Power Amplifier Development Contract to Rockwell Collins
3.4.6 Nitronex Receives Additional Funding for X-Band GaN PAs
3.4.7 RFMD Unveils New Foundry Process Technology
3.4.8 Panasonic Announces Automotive Millimeter Wave Radar Technology
3.4.9 RFMD Achieves ISO/TS 16949 Certification
3.4.10 TriQuint Receives DARPA GaN Contract
3.4.11 Avago Technologies and TriQuint Agree to Settle Claims
3.4.12 Hittite Releases New Selection Guide
3.4.13 ANADIGICS Announces New Senior Management Personnel
3.4.14 GaAs Labs Acquires Nitronex Corporation
3.4.15 Cree Releases GaN Device Models
3.5 Patents
4 Silicon Devices
4.1 Company Results
4.1.1 SOITEC Reports Q4 and FY 2012 Financials
4.1.2 Fairchild Reports Q1 FY 2012 Financials
4.1.3 TowerJazz Reports Q1 FY 2012 Results
4.2 New Products
4.2.1 Hittite Microwave Introduces Silicon IC Solutions for 60 GHz Applications
4.2.2 GigOptix Announces SiGe TIAs for 40Gbps Networks
4.2.3 NXP Expands RFCMOS Solutions for Automotive Radio Applications
4.2.4 Cree Introduces Family of 50A SiC Power Devices
4.2.5 SemiSouth Delivers 650V SiC JFET Power Transistors
4.2.6 SemiSouth Develops SiC JFETs for 3-phase Power Supplies
4.2.7 Hittite Introduces a Track and Hold Amplifier Family
4.2.8 Mitsubishi Electric Develops SiC Inverter
4.2.9 Microsemi Expands RF Power MOSFET Offering
4.2.10 GigOptix Develops Optical Driver
4.2.11 Analog Devices Announces 13 GHz PLL Synthesizer
4.2.12 Analog Devices Speeds Up Direct Digital Synthesizers
4.2.13 SemiSouth Doubles Current Rating of Newest SiC Diodes
4.2.14 Peregrine Expands Digitally Tunable Capacitor Product Line
4.2.15 Peregrine Announces 8 GHz SP4T RF Switch
4.2.16 Peregrine Expands Multi-Throw Switch Portfolio
4.2.17 Freescale Expands RF LDMOS Power Amplifier Offerings
4.2.18 Freescale Introduces Wideband RF Power LDMOS FETs
4.2.19 Peregrine Introduces SP3T Switch for 2.4 GHz Applications
4.2.20 Javelin Designs CMOS PA in Samsung Galaxy Appeal
4.3 Other
4.3.1 SEMATECH and centrotherm Partner to Improve Processing Techniques
4.3.2 Criminal Case against Former Vitesse Executives Ends with Mistrial
4.3.3 Amalfi Semiconductor Closes $20 Million in Funding
4.3.4 GE Expands Pompano Beach Facility for SiC Products
4.3.5 US ITC to Investigate RFMD, Motorola Mobility and HTC
4.3.6 GigOptix Appoints New Board Member
4.3.7 GigOptix Licenses SiGe Millimeter Wave Technology from IBM